? semiconductor components industries, llc, 2000 november, 2000 rev. 1 1 publication order number: ntd6n40/d ntd6n40 preferred device advance information power mosfet 6 amps, 400 volts nchannel dpak designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified ? industry standard dpak surface mount package typical applications ? switch mode power supplies ? pwm motor controls ? converters ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drainsource voltage v dss 400 vdc draingate voltage (r gs = 1.0 m w ) v dgr 400 vdc gatesource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc drain continuous continuous @ 100 c single pulse (t p 10 m s) i d i d i dm 6.0 4.2 21 adc total power dissipation derate above 25 c total power dissipation @ t c = 25 c when mounted with the minimum recommended pad size p d 96 0.77 1.75 watts w/ c w/ c operating and storage temperature range t j , t stg 55 to 150 c single draintosource avalanche energy starting t j = 25 c (v dd = 100 vdc, v gs = 10 vdc, i l = 6 a, l = 10 mh, r g = 25 w ) e as 180 mj thermal resistance junctiontocase junctiontoambient junctiontoambient (note 1.) r q jc r q ja r q ja 1.30 100 71.4 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. this document contains information on a new product. specifications and information herein are subject to change without notice. 2500 tape & reel 6 amperes 400 volts r ds(on) = 1100 m w device package shipping ordering information ntd6n40 dpak 75 units/rail case 369a dpak style 2 pin assignment http://onsemi.com nchannel d s g ntd6n401 dpak preferred devices are recommended choices for future use and best overall value. marking diagrams y = year ww = work week t = mosfet yww t 6n40 gate source drain ntd6n40t4 dpak 75 units/rail drain 1 2 3 4
ntd6n40 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 0.25 madc) temperature coefficient (positive) v (br)dss 400 500 vdc mv/ c zero gate voltage collector current (v ds = 400 vdc, v gs = 0 vdc) (v ds = 400 vdc, v gs = 0 vdc, t j = 125 c) i dss 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0) i gss(f) i gss(r) 100 100 nadc on characteristics (note 2.) gate threshold voltage i d = 0.25 ma, v ds = v gs temperature coefficient (negative) v gs(th) 2.0 2.7 6.0 4.0 vdc mv/ c static draintosource onresistance (v gs = 10 vdc, i d = 3 adc) r ds(on) 900 1100 mohm draintosource onvoltage (v gs = 10 vdc, i d = 6 adc) (v gs = 10 vdc, i d = 3 adc, t j = 125 c) v ds(on) 7.9 6.9 vdc forward transconductance (v ds = 15 vdc, i d = 3 adc) g fs 2.0 4.4 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 515 720 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 185 260 transfer capacitance f = 1 . 0 mhz) c rss 15 30 switching characteristics (note 3.) turnon delay time t d(on) 7.0 10 ns rise time (v dd = 200 vdc, i d = 6 adc, v gs =10vdc t r 11 20 turnoff delay time v gs = 10 vdc, r g = 9.1 w ) t d(off) 19 40 fall time r g 9.1 w ) t f 10 20 gate charge q t 9.5 19 nc (v ds = 320 vdc, i d = 6 adc, q 1 2.0 (v ds 320 vdc , i d 6 adc , v gs = 10 vdc) q 2 3.0 q 3 6.0 sourcedrain diode characteristics forward onvoltage (note 2.) (i s = 6 adc, v gs = 0 vdc) (i s = 6 adc, v gs = 0 vdc, t j = 125 c) v sd 0.9 0.8 1.0 vdc reverse recovery time t rr 270 ns (i s 6 adc v gs 0 vdc t a 110 (i s = 6 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 160 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 1.6 m c 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
ntd6n40 http://onsemi.com 3 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 dpak case 369a13 issue aa
ntd6n40 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntd6n40/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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